heterojunction bipolar transistor meaning in Chinese

异质结双极型晶体管

Heterojunction bipolar transistor , hbt
异质接面双载子晶体管
13 . 5 ghz ft sige heterojunction bipolar transistor fabricated by planar technology
Ft为13 . 5ghz的平面结构sige异质结双极晶体管的研制
A planar sige heterojunction bipolar transistor was fabricated using polysilicon emitter technology and sige base grown by molecular beam epitaxy . the sige hbt
室温下该晶体管的直流电流增益为30到50 ，基极开路下，收集极-发射极反向击穿电压
It has been shown that the performance of sige heterojunction bipolar transistor ( sige hbt ) in high frequency is much better than that of si bipolar junction transistor ( si bjt ) , and is better than that of algaas / gaas metal semiconductor field effect transistor ( algaas / gaas mesfet ) in some aspects
Sige异质结双极晶体管（ sigehbt ）的高频性能大大优于si双极晶体管（ sibjt ），并在某些方面优于algaas / gaasmesfet ，所以sigehbt具有广阔的应用前景。